CW laser annealing of InPMIZUTA, M; MERZ, J. L.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp 634-638, issn 0021-4922, 1Article

CW laser-annealing behavior of Se⁺-implanted InP investigated by ellipsometryMIZUTA, M; MERZ, J. L.Applied physics letters. 1983, Vol 43, Num 4, pp 375-377, issn 0003-6951Article

Folded-cavity transverse junction stripe surface-emitting laserTAKAMORI, T; COLDREN, L. A; MERZ, J. L et al.Applied physics letters. 1989, Vol 55, Num 11, pp 1053-1055, issn 0003-6951, 3 p.Article

Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structuresFAFARD, S; FORTIN, E; MERZ, J. L et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11062-11066, issn 0163-1829Article

Lasing characteristics of a continuous-wave operated folded-cavity surface-emitting laserTAKAMORI, T; COLDREN, L. A; MERZ, J. L et al.Applied physics letters. 1990, Vol 56, Num 23, pp 2267-2269, issn 0003-6951Article

Molecular-beam-epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientationSUBBANNA, S; KROEMER, H; MERZ, J. L et al.Journal of applied physics. 1986, Vol 59, Num 2, pp 488-494, issn 0021-8979Article

Electronically active defects in cw beam-annealed Si. I: Electron-beam-induced currentSHENG, N. H; MIZUTA, M; MERZ, J. L et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3072-3082, issn 0021-8979Article

Electronically active defects in cw beam-annealed Si. II: Deep-level transient spectroscopySHENG, N. H; MERZ, J. L.Journal of applied physics. 1984, Vol 55, Num 8, pp 3083-3091, issn 0021-8979Article

Effect of V/III variation on the optical properties of GaAs and Al_xGa_1-xAs grown by metalorganic chemical vapor depositionKHALID MOHAMMED; MERZ, J. L; RUMRONG KASEMSET et al.Applied physics letters. 1983, Vol 43, Num 1, pp 103-105, issn 0003-6951Article

Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloysMINTAIROV, A. M; BLAGNOV, P. A; MERZ, J. L et al.SPIE proceedings series. 2003, pp 157-160, isbn 0-8194-4824-9, 4 p.Conference Paper

Experimental demonstration of quantum-dot cellular automataSNIDER, G. L; ORLOV, A. O; AMLANI, I et al.Semiconductor science and technology. 1998, Vol 13, Num 8A, pp A130-A134, issn 0268-1242Conference Paper

Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wellsFERREIRA, A. C; BUYANOV, A. V; GOSSARD, A. C et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 420-423, issn 0039-6028Conference Paper

Fresnel analysis of effective mirror reflectivity in folded-cavity in-plane surface-emitting lasersCHIH-PING CHAO; ZUON-MIN CHUANG; KWOK-KEUNG LAW et al.IEEE photonics technology letters. 1993, Vol 5, Num 4, pp 390-392, issn 1041-1135Article

Electronic structure of a shallow acceptor confined in a GaAs/Al_xGa_1-xAs quantum wellHOLTZ, P. O; ZHAO, Q. Z; MONEMAR, B et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 23, pp 15675-15678, issn 0163-1829Article

Low-threshold InGaAs/GaAs/AlGaAs quantum-well laser with an intracavity optical modulator by impurity-induced disorderingZOU, W. X; YOUNG, D. B; LAW, K.-K et al.Applied physics letters. 1993, Vol 62, Num 6, pp 556-558, issn 0003-6951Article

Unique top-driven low-threshold lasers by impurity-induced disorderingWEI-XIONG ZOU; KWOK-KEUNG LAW; LIANG-CHEN WANG et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 2097-2102, issn 0018-9197Article

Low-threshold lasers fabricated by alignment-free impurity induced disorderingFLOYD, P. D; CHAO, C. P; LAW, K.-K et al.IEEE photonics technology letters. 1993, Vol 5, Num 11, pp 1261-1263, issn 1041-1135Article

Continuous-wave photoluminescence excitation spectra of multiple narrow-stepped quantum wells : evidence for saturation of interface trapsDING, Y. J; GUO, C. L; LI, S et al.Applied physics letters. 1992, Vol 60, Num 2, pp 154-156, issn 0003-6951Article

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxyGLAESSER, A. S; MERZ, J. L; NAHORY, R. E et al.Applied physics letters. 1992, Vol 60, Num 11, pp 1345-1347, issn 0003-6951Article

Self-linearized optical modulation of a normally-on asymmetric Fabry-Perot modulation with high contrast, low insertion-loss, and low operating energyLAWQ, K.-K; MERZ, J. L; COLDREN, L. A et al.Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp L1699-L1701, issn 0021-4922, 2Article

Dynamic of free and bound excitons in center-doped GaAl/AsGaAs quantum wellsMONEMAR, B; KALT, H; HARRIS, C et al.Superlattices and microstructures. 1991, Vol 9, Num 3, pp 281-284, issn 0749-6036, 4 p.Article

Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etchingCHAO, C. P; HU, S. Y; FLOYD, P et al.IEEE Photonics technology letters. 1991, Vol 3, Num 7, pp 585-587Article

Low-voltage superlattice asymmetric Fabry-Perot reflection modulatorLAW, K-K; COLDREN, L. A; MERZ, J. L et al.IEEE Photonics technology letters. 1991, Vol 3, Num 4, pp 324-326Article

A tunable quantum well infrared detector based on photon-assisted resonant tunnellingDOUGHTY, K. L; SIMES, R. J; GOSSARD, A. C et al.Semiconductor science and technology. 1990, Vol 5, Num 6, pp 494-497, issn 0268-1242, 4 p.Article

Radiative recombination in doped AlGaAs/GaAs heterostructuresZHAO, Q. X; BERGMAN, J. P; HOLTZ, P. O et al.Semiconductor science and technology. 1990, Vol 5, Num 8, pp 884-889, issn 0268-1242, 6 p.Article